| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N3251A is a PNP silicon switching transistor manufactured by Microsemi Corporation. This device is qualified per MIL-PRF-19500/323 and features a maximum collector-emitter voltage of 60 Vdc and a continuous collector current of 200 mAdc.
With a total power dissipation of 360 mW at 25°C ambient temperature and 1.2 W at 25°C case temperature, the JANTX2N3251A is suitable for various switching applications. It operates within a junction temperature range of -65°C to +175°C.
The transistor is housed in a TO-39 (TO-205AD) metal can package, designed for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 10mA and 1V, and a maximum collector-emitter saturation voltage of 0.50V at 50mA.
Dynamic characteristics include an input capacitance of 8 pF and an output capacitance of 6 pF. Switching times are also specified, with a turn-on time of 70 ns and a turn-off time of up to 300 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60 Vdc.
The continuous collector current is 200 mAdc.
The operating and storage junction temperature range is -65°C to +175°C.
It is supplied in a TO-205AD, TO-39-3 Metal Can package.
The minimum DC current gain (hFE) is 100 at 10mA and 1V.
The maximum collector-emitter saturation voltage is 500mV at 5mA and 50mA.
The turn-on time is 70 ns.