| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Transistor Type |
The JANTX2N2920 is a single NPN bipolar junction transistor (BJT) manufactured by Raytheon. It is designed for general-purpose applications and offers a maximum collector current of 30mA and a maximum collector-emitter voltage of 60V.
Key electrical characteristics include a typical DC current gain (hFE) of 300 at 1mA and 5V, and a maximum power dissipation of 350mW. The transistor operates within a wide temperature range of -65°C to 200°C.
This component is supplied in a TO-78-6 package, suitable for through-hole mounting. The JANTX2N2920 is a military-grade transistor, indicated by its JANTX qualification, suggesting high reliability and suitability for demanding environments.
While compliance data such as RoHS and REACH status are listed, they are currently unverified. Further details regarding specific test conditions for some parameters may be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-78-6.
-65°C to 200°C.
30mA.
Minimum 300 at 1mA, 5V.
350mW.
Through hole.