| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Lead Style | |
| Material | |
| Military Grade | |
| Mounting Style | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present |
The JANTX2N2905A is a military-qualified PNP bipolar junction transistor (BJT) manufactured by Raytheon, suitable for high-reliability applications. This device operates as a switching transistor and is housed in a TO-39 (TO-205) through-hole package.
Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a minimum hFE of 100 at 150mA and 10V. The transistor has a maximum power dissipation rating of 800mW and a continuous collector current capability of 600mA. Its operating temperature range spans from -65°C to 200°C (TJ).
This transistor is constructed from silicon and is designed for through-hole mounting. The JANTX2N2905A series is noted for its high-reliability qualifications, extending up to the JANS level. It is also available in a TO-5 package, offering flexibility for different design requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JANTX2N2905A is 60V.
The minimum hFE for the JANTX2N2905A at 150mA and 10V is 100.
The maximum power dissipation for the JANTX2N2905A is 800mW.
The operating temperature range for the JANTX2N2905A is -65°C to 200°C (TJ).
The JANTX2N2905A is supplied in a TO-39 package.
The JANTX2N2905A is a through-hole mount component.