JANTX2N2905A The JANTX2N2905A from Raytheon is a PNP bipolar junction transistor designed for switching applications. It features a 60V collector-emitter breakdown voltage and an 800mW maximum power rating.
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JANTX2N2905A

Available from 1 distributors
Mfr Name: Raytheon
Raytheon
The JANTX2N2905A from Raytheon is a PNP bipolar junction transistor designed for switching applications. It features a 60V collector-emitter breakdown voltage and an 800mW maximum power rating.
✓ Total Stock: 1 pcs
$ Price Range: $0.11

JANTX2N2905A Available from 1 distributor

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JANTX2N2905A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Industrial Grade
Lead Style
Material
Military Grade
Mounting Style
Number of Pins
Operating Temperature
Power Dissipation (Max)
SVHC Present

JANTX2N2905A Description

Short technical summary and product information.

The JANTX2N2905A is a military-qualified PNP bipolar junction transistor (BJT) manufactured by Raytheon, suitable for high-reliability applications. This device operates as a switching transistor and is housed in a TO-39 (TO-205) through-hole package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a minimum hFE of 100 at 150mA and 10V. The transistor has a maximum power dissipation rating of 800mW and a continuous collector current capability of 600mA. Its operating temperature range spans from -65°C to 200°C (TJ).

 

This transistor is constructed from silicon and is designed for through-hole mounting. The JANTX2N2905A series is noted for its high-reliability qualifications, extending up to the JANS level. It is also available in a TO-5 package, offering flexibility for different design requirements.

JANTX2N2905A Quick Information

Product Type: PNP Switching Transistor
Series: 2N2905A
Canonical Name: JANTX2N2905A PNP Switching Transistor
Subcategory: PNP

JANTX2N2905A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N2905A Estimated Pricing

Qty Low High
1+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N2905A Features

  • Military qualified PNP switching transistor.
  • 60V collector-emitter breakdown voltage.
  • 800mW maximum power dissipation.
  • TO-39 through-hole package.
  • Wide operating temperature range.

JANTX2N2905A Applications

  • Used in general-purpose switching circuits.
  • Suitable for driver stages in amplifier designs.
  • Ideal for linear amplification in industrial equipment.
  • Can be employed in military-grade electronic systems.

JANTX2N2905A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JANTX2N2905A?

The collector-emitter breakdown voltage for the JANTX2N2905A is 60V.

What is the minimum hFE of the JANTX2N2905A at 150mA and 10V?

The minimum hFE for the JANTX2N2905A at 150mA and 10V is 100.

What is the maximum power dissipation for the JANTX2N2905A?

The maximum power dissipation for the JANTX2N2905A is 800mW.

What is the operating temperature range of the JANTX2N2905A?

The operating temperature range for the JANTX2N2905A is -65°C to 200°C (TJ).

What package type is the JANTX2N2905A supplied in?

The JANTX2N2905A is supplied in a TO-39 package.

How is the JANTX2N2905A mounted?

The JANTX2N2905A is a through-hole mount component.

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