| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The JANTX2N2905A is a military-qualified PNP bipolar junction transistor designed for high-reliability applications. It offers a collector-emitter breakdown voltage of 60V and a continuous collector current of 600mA.
This transistor is housed in a TO-39 (TO-205) through-hole package, making it suitable for various electronic circuits. It operates within a temperature range of -65°C to 200°C and has a maximum power dissipation of 800mW.
The JANTX2N2905A series is known for its high-reliability, with military qualification up to the JANS level. It is a silicon-based transistor suitable for switching applications where robust performance is required.
This component is RoHS non-compliant and contains lead. It is available in a bag package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (collector to emitter) is 60V.
The JANTX2N2905A comes in a TO-39 through-hole package.
The operating junction temperature range is -65°C to 200°C.
The minimum hFE is 100 at 150mA collector current and 10V collector-emitter voltage.
The maximum power dissipation is 800mW (0.8W).
The transistor is made of silicon.