| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N2857 from Microsemi Corporation is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. It comes in a TO-72-3 Metal Can package suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter breakdown voltage of 15V and a maximum collector current of 40mA. The transistor has a transition frequency of 500MHz, a minimum DC current gain (hFE) of 30 at 3mA and 1V, and a typical noise figure of 4.5dB at 450MHz. The gain ranges from 12.5dB to 21dB at 450MHz. The maximum power dissipation is 200mW.
This device is rated for a wide operating temperature range from -65°C to 200°C (TJ). It is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
This transistor is suitable for various RF circuit designs requiring a reliable NPN component with specific high-frequency performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C (TJ).
The JANTX2N2857 is supplied in a TO-72-3 Metal Can package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The collector-emitter breakdown voltage is 15V.
The maximum collector current is 40mA.
The transition frequency is 500MHz.