| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 00+41 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type |
The JANTX2N2432A from Microsemi Corporation is a single NPN bipolar junction transistor (BJT) suitable for through-hole mounting. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA, with a power dissipation rating of 300mW.
With a minimum DC current gain (hFE) of 80 at 1mA and 5V, and a low collector cutoff current of 10nA, the JANTX2N2432A is designed for reliable performance. The collector-emitter saturation voltage is a maximum of 0.15mV at 500μA and 10V. It operates across a wide temperature range from -65°C to 175°C.
Packaged in a TO-18 (TO-206AA) metal can, this transistor is intended for through-hole mounting. Its specifications make it suitable for general-purpose amplification and switching applications where a robust NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The maximum continuous collector current is 100mA.
The minimum DC current gain (hFE) is 80 at 1mA and 5V.
The operating temperature range is -65°C to 175°C.
This is an NPN bipolar junction transistor.
The JANTX2N2432A is supplied in a TO-18 (TO-206AA) metal can package.