| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73 pcs
|
73 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Type |
The JANTX2N2369A from Raytheon is a high-performance NPN Silicon Transistor. It is qualified per MIL-PRF-19500/317 and suitable for demanding applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 15 Vdc and a collector-base voltage of 40 Vdc. The transistor can handle a maximum power dissipation of 0.36W at 25°C ambient temperature. It operates within a junction temperature range of -65°C to +200°C.
This transistor comes in a TO-18 (TO-206AA) package, designed for through-hole mounting. Its thermal resistance from ambient to case is 400°C/W.
The JANTX2N2369A is specified for various applications requiring reliable bipolar transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 15 Vdc at 10mAdc.
The maximum power dissipation is 0.36W at 25°C ambient temperature.
The operating and storage junction temperature range is -65°C to +200°C.
The JANTX2N2369A is available in a TO-18 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.