2N2907AJAN
Motorola Semicondutor
The 2N2907AJAN is a bipolar junction transistor from Motorola Semiconductor. It features RoHS3 compliance and an MSL rating of 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JANTX2N2369A is an NPN Silicon Transistor manufactured by Motorola Semiconductor. It is qualified per MIL-PRF-19500/317 and designed for various electronic applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 15Vdc and a collector-base voltage of 40Vdc. The transistor offers a minimum forward-current transfer ratio (hFE) of 40 at IC = 10mAdc and VCE = 0.35Vdc. Its collector-emitter saturation voltage is a maximum of 0.20Vdc at IC = 10mAdc and IB = 1.0mAdc.
This transistor operates within a junction temperature range of -65 to +200°C. It has a total power dissipation of 0.36W at TA = +25°C and a thermal resistance of 400°C/W.
The JANTX2N2369A is available in TO-18 (TO-206AA) and TO-46 (TO-206AB) package types. Surface mount variants are also available. The device is qualified per MIL-PRF-19500/317.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 15 Vdc.
The maximum collector-emitter voltage is 15 Vdc.
The operating and storage junction temperature range is -65 to +200 °C.
The total power dissipation is 0.36 W.
Available package types include TO-18 and TO-46.
