| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N2060 is a bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed as a dual NPN transistor in a TO-78-6 package, suitable for various switching and amplification tasks. The device operates over a temperature range of -65°C to 200°C and can dissipate up to 600mW of power. It has a collector-emitter voltage rating of 60V and a maximum collector-base leakage current of 10µA. The transistor features a minimum DC current gain (hFE) of 50 at 10mA collector current and a maximum collector-emitter saturation voltage of 300mV at specified test conditions. Its through-hole mounting type makes it suitable for through-hole PCB assembly, and it conforms to RoHS standards. The device's specifications make it appropriate for use in power switching, signal amplification, and other electronic circuit applications requiring high voltage and current gain.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 60V.
It comes in a TO-78-6 package.
It operates over a temperature range of -65°C to 200°C.