| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature |
The JANTX2N1483 is a single NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for applications requiring a breakdown voltage of up to 40V and can handle a maximum power dissipation of 1.75W.
This transistor operates within a wide temperature range, from -65°C to 200°C. Key electrical characteristics include a maximum collector cutoff current of 15µA and a minimum DC current gain (hFE) of 20 at 750mA collector current and 4V collector-emitter voltage.
The JANTX2N1483 is supplied in a Bulk package and features a through-hole mounting type. Its TO-233AA, TO-8-3 Metal Can package is suitable for various electronic assemblies.
This component is part of the Military, MIL-PRF-19500/180 series, indicating its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum power dissipation is 1.75W.
The operating temperature range is from -65°C to 200°C.
The minimum DC current gain (hFE) is 20 at 750mA collector current and 4V collector-emitter voltage.
The JANTX2N1483 is supplied in Bulk packaging.
The JANTX2N1483 is mounted using the Through Hole method.