| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Transistor Type |
The JANSR2N2906AUB from Microsemi Corporation is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for surface mount installation, utilizing a 4-SMD, No Lead package.
Key electrical specifications include a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. Its saturation voltage (Vce Sat) is a maximum of 1.6V at 50mA base current and 500mA collector current. The cutoff current (Icbo) is a low 50nA.
This component operates within a wide temperature range of -65°C to 200°C. It is qualified to MIL-PRF-19500/291 standards, indicating its suitability for demanding applications. The bulk package type is standard for this military-grade transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Vce breakdown voltage is 60V.
The package is 4-SMD, No Lead surface mount.
The junction temperature range is -65°C to 200°C.
Minimum 40 at 150mA collector current and 10V Vce.
Maximum collector current is 600mA.
Maximum power dissipation is 500mW.
Yes, the JANSR2N2906AUB is qualified to MIL-PRF-19500/291.