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JANSG2N7269 The Infineon Technologies JANSG2N7269 is an N-channel Radiation Hardened Power MOSFET. It offers a 200V breakdown voltage and 26A continuous drain current.
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JANSG2N7269

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies JANSG2N7269 is an N-channel Radiation Hardened Power MOSFET. It offers a 200V breakdown voltage and 26A continuous drain current.
✓ Total Stock: 18 pcs
$ Price Range: $1.25

JANSG2N7269 Available from 1 distributor

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✓ Non-Authorised
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18 pcs
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18 pcs On Request 1 On Request On Request 9623 On Request On Request
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JANSG2N7269 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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JANSG2N7269 Description

Short technical summary and product information.

The Infineon Technologies JANSG2N7269 is a high-performance, N-channel, radiation-hardened power MOSFET utilizing HEXFET technology. Designed for space applications, it is qualified to the JANS screening flow according to MIL-PRF-19500.

 

Key electrical characteristics include a maximum breakdown voltage (BVDSS) of 200V and a continuous drain current (ID) of 26A. The maximum on-resistance (RDS(on)) is 100mOhm at 100 krad(Si), and the total gate charge (QG) is a maximum of 170nC. The device is characterized for both Total Dose and Single Event Effects (SEE).

 

This MOSFET features a hermetically sealed, electrically isolated TO-254AA package with ceramic eyelets. Its simple drive requirements and temperature stability make it suitable for applications such as DC-DC converters and motor drives where reliability in harsh environments is critical.

JANSG2N7269 Quick Information

Product Type: Power MOSFET
Series: IR HiRel
Canonical Name: JANSG2N7269 N-channel Radiation Hardened Power MOSFET
Subcategory: Power MOSFET

JANSG2N7269 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANSG2N7269 Estimated Pricing

Qty Low High
1+ $1.25 $1.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANSG2N7269 Features

  • N-channel radiation hardened power MOSFET
  • 200V breakdown voltage
  • 26A continuous drain current
  • Low RDS(on) of 100mOhm
  • Hermetically sealed TO-254AA package

JANSG2N7269 Applications

  • Used in RF signal filtering circuits
  • Suitable for RF power amplifiers
  • Ideal for high-voltage RF switching
  • Applicable in rectification in RF systems

JANSG2N7269 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the JANSG2N7269?

The JANSG2N7269 has a maximum breakdown voltage (BVDSS) of 200V.

What is the continuous drain current rating for the JANSG2N7269?

The JANSG2N7269 is rated for a continuous drain current (ID) of 26A.

What is the maximum on-resistance of the JANSG2N7269?

The maximum on-resistance (RDS(on)) for the JANSG2N7269 is 100mOhm at 100 krad(Si).

What is the total gate charge for the JANSG2N7269?

The maximum total gate charge (QG) for the JANSG2N7269 is 170nC.

What package type is the JANSG2N7269 supplied in?

The JANSG2N7269 is supplied in a TO-254AA package.

What is the ESD rating for the JANSG2N7269?

The JANSG2N7269 has an ESD rating of Class 3A.

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