| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANS2N5665 from Microchip Technology is an NPN power silicon switching transistor designed for high-voltage applications. It is qualified per MIL-PRF-19500/455 and offers a maximum collector-emitter voltage of 300 Vdc and a continuous collector current of 5 Adc.
This transistor is packaged in a TO-66 (TO-213AA) case, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 1A and 5V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 1V at 1A and 5A. The operating and storage junction temperature range is from -65°C to +200°C.
With a power dissipation rating of 2.5W at 25°C ambient temperature and 15W at 100°C case temperature, the JANS2N5665 is suitable for various power switching applications. Its dynamic characteristics include an output capacitance of 120 pF and switching times of 0.25 μs for turn-on and 2.0 μs for turn-off.
This device is qualified per MIL-PRF-19500/455, indicating its suitability for demanding applications requiring high reliability. The RoHS status is listed as RoHS3 Compliant, MSL is 1 Unlimited, and REACH status is Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the JANS2N5665 is 300 Vdc.
The JANS2N5665 has a continuous collector current rating of 5 Adc.
The operating and storage junction temperature range for the JANS2N5665 is -65°C to +200°C.
The JANS2N5665 is supplied in a TO-66 (TO-213AA) package.
The RoHS status for the JANS2N5665 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the JANS2N5665 is 1 Unlimited.