| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Transistor Type |
The JANS2N5416UA from Microsemi Corporation is a PNP bipolar junction transistor (BJT) suitable for applications requiring high voltage and current handling. It features a maximum collector current of 1A and a collector-emitter breakdown voltage of 300V.
This transistor operates with a DC current gain (hFE) of at least 30 at 50mA and 10V. Its Vce saturation is a maximum of 2V at 5mA/50mA, and the maximum collector cutoff current is 1mA. The device has a maximum power dissipation of 750mW.
Designed for surface mounting, the JANS2N5416UA comes in a 4-SMD, No Lead package. It is rated for military grade applications and meets the MIL-PRF-19500/485 qualification. The operating temperature range is from -65°C to 200°C (TJ).
Environmental compliance includes RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH Unaffected status. This transistor is suitable for designs requiring robust performance in demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300V.
The maximum collector current is 1A.
The operating junction temperature range is -65°C to 200°C.
It uses a 4-SMD, no lead surface mount package with UA supplier device package.
Yes, it is qualified to MIL-PRF-19500/485.