| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature |
The JANS2N5004 from Microchip Technology is a single NPN bipolar junction transistor (BJT) designed for robust performance in demanding environments. It features a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 5A. The transistor exhibits a minimum DC current gain (hFE) of 70 at 2.5A and 5V.
With a wide operating temperature range from -65°C to 200°C, the JANS2N5004 is suitable for applications requiring thermal stability. The saturation voltage (Vce) is a maximum of 1.5V at 500mA and 5A collector current, with a maximum collector cutoff current of 50μA. This component is housed in a TO-59 package with a stud mount type, facilitating efficient heat dissipation and secure mounting.
This transistor is ideal for power switching and amplification circuits where reliability and performance under varying conditions are critical. Its specifications make it a suitable choice for industrial and high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum collector current is 5A.
The maximum power dissipation is 2W.
The operating junction temperature range is -65°C to 200°C.
The JANS2N5004 is available in a TO-210AA, TO-59-4 stud mount package.
The minimum DC current gain (hFE) is 70 at a test condition of 2.5A collector current and 5V collector-emitter voltage.