JANS2N4150 The Microchip Technology JANS2N4150 is an NPN bipolar junction transistor designed for through-hole mounting. It offers a 70V collector-emitter breakdown voltage and a maximum collector current of 10A.
Mfr Part #:

JANS2N4150

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANS2N4150 is an NPN bipolar junction transistor designed for through-hole mounting. It offers a 70V collector-emitter breakdown voltage and a maximum collector current of 10A.
Total Stock: 33 pcs
$ Price Range: $0.99

JANS2N4150 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33 pcs
33 pcs On Request 1 On Request On Request On Request On Request On Request

JANS2N4150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Packages
Power
Qualification
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JANS2N4150 Description

Short technical summary and product information.

The JANS2N4150 from Microchip Technology is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a high collector-emitter breakdown voltage of 70V and can handle a maximum collector current of 10A. The transistor is rated for a maximum power dissipation of 1W and operates within a temperature range of -65°C to 200°C.

 

This component is housed in a TO-205AA, TO-5-3 Metal Can package, designed for through-hole mounting. Key electrical characteristics include a Vce saturation voltage of 2.5V at 1A/10A and a minimum DC current gain (hFE) of 40 at 5A/5V. The current cutoff is a maximum of 10μA.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified. The part is qualified under MIL-PRF-19500/394, suggesting suitability for military or high-reliability applications. Its specifications make it a robust choice for power switching and amplification circuits where high current and voltage handling are required.

JANS2N4150 Quick Information

Product Type: NPN Transistor
Canonical Name: Microchip Technology JANS2N4150 NPN Transistor
Subcategory: Single

JANS2N4150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANS2N4150 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANS2N4150 Features

  • NPN bipolar junction transistor
  • 70V collector-emitter breakdown voltage
  • 10A maximum collector current
  • TO-205AA, TO-5-3 metal can package
  • Through-hole mounting type

JANS2N4150 Applications

  • Suitable for power switching circuits
  • Used in amplification applications
  • High-reliability applications
  • Military specification compliant

JANS2N4150 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the JANS2N4150 transistor?

The operating temperature range is -65°C to 200°C.

What is the package type for the JANS2N4150?

The package is TO-205AA, TO-5-3 Metal Can.

What is the maximum collector current for the JANS2N4150?

The maximum collector current is 10A.

What is the collector-emitter breakdown voltage of the JANS2N4150?

The collector-emitter breakdown voltage is 70V.

What is the minimum DC current gain (hFE) for the JANS2N4150?

The minimum DC current gain (hFE) is 40 at 5A, 5V.

Home
Account

Categories