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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Packages | |
| Power | |
| Qualification | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANS2N4150 from Microchip Technology is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a high collector-emitter breakdown voltage of 70V and can handle a maximum collector current of 10A. The transistor is rated for a maximum power dissipation of 1W and operates within a temperature range of -65°C to 200°C.
This component is housed in a TO-205AA, TO-5-3 Metal Can package, designed for through-hole mounting. Key electrical characteristics include a Vce saturation voltage of 2.5V at 1A/10A and a minimum DC current gain (hFE) of 40 at 5A/5V. The current cutoff is a maximum of 10μA.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified. The part is qualified under MIL-PRF-19500/394, suggesting suitability for military or high-reliability applications. Its specifications make it a robust choice for power switching and amplification circuits where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C.
The package is TO-205AA, TO-5-3 Metal Can.
The maximum collector current is 10A.
The collector-emitter breakdown voltage is 70V.
The minimum DC current gain (hFE) is 40 at 5A, 5V.