| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 1919 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The Microchip Technology JANS2N3810 is a dual PNP bipolar junction transistor (BJT) suitable for through-hole mounting. It offers a collector-emitter voltage rating of 60V and a maximum power dissipation of 350mW. The transistor operates across a wide temperature range from -65°C to 200°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 150 at 1mA and 5V, and a collector cutoff current (ICBO) of 10µA. The Vce saturation voltage is a maximum of 250mV at 100µA and 1mA. The package type is TO-78-6 Metal Can.
This component is part of the Transistors - Bipolar (BJT) - Arrays category. Its through-hole mounting makes it suitable for various electronic circuit designs requiring discrete semiconductor components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C.
The maximum power dissipation is 350mW.
The minimum DC current gain (hFE) is 150 at 1mA and 5V.
The collector-emitter voltage rating is 60V.
The JANS2N3810 is supplied in a TO-78-6 Metal Can package.
The JANS2N3810 is designed for through-hole mounting.