JANS2N3501UB The Microchip Technology JANS2N3501UB is an NPN bipolar junction transistor designed for surface mount applications. It features a 150V collector-emitter breakdown voltage and a maximum collector current of 300mA.
Mfr Part #:

JANS2N3501UB

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANS2N3501UB is an NPN bipolar junction transistor designed for surface mount applications. It features a 150V collector-emitter breakdown voltage and a maximum collector current of 300mA.
Total Stock: 200 pcs
$ Price Range: $0.99

JANS2N3501UB Available from 1 distributor

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JANS2N3501UB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JANS2N3501UB Description

Short technical summary and product information.

This NPN bipolar junction transistor from Microchip Technology, part number JANS2N3501UB, is suitable for various electronic applications requiring a surface mount component. It offers a collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 300mA. The transistor has a maximum power dissipation of 500mW.

 

With a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 400mV at 150mA collector current and 15mA base current, this device provides reliable performance. It is designed for operation within a temperature range of -65°C to 200°C. The JANS2N3501UB comes in a 4-SMD, No Lead (UB) package, making it ideal for space-constrained designs.

 

Its RoHS3 compliant status and MSL 1 rating indicate suitability for a wide range of manufacturing processes. The surface mount design simplifies integration into printed circuit boards.

JANS2N3501UB Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: Microchip Technology JANS2N3501UB NPN Bipolar Junction Transistor
Subcategory: Bipolar (BJT) - Single

JANS2N3501UB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANS2N3501UB Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANS2N3501UB Features

  • NPN bipolar junction transistor.
  • 150V collector-emitter breakdown voltage.
  • 300mA maximum collector current.
  • 500mW maximum power dissipation.
  • Surface mount 4-SMD, No Lead (UB) package.

JANS2N3501UB Applications

  • Used in high-voltage switching circuits
  • Suitable for signal amplification modules
  • Ideal for power supply regulation
  • Applicable in automotive electronic systems

JANS2N3501UB FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the JANS2N3501UB?

-65°C to 200°C (TJ)

What is the maximum collector current for this NPN transistor?

300 mA

What is the minimum DC current gain (hFE) for the JANS2N3501UB?

100 @ 150mA, 10V

What is the package type for the JANS2N3501UB?

4-SMD, No Lead

Is the JANS2N3501UB RoHS compliant?

RoHS3 Compliant

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