| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-01 21:33:19 |
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This NPN bipolar junction transistor (BJT) from Microchip Technology, part number JANS2N2222AUB, is suitable for switching applications. It offers a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 800mA.
The device operates across a wide temperature range from -65°C to 200°C, making it robust for various environmental conditions. It is housed in a 4-SMD, No Lead package and utilizes surface mount technology for integration into electronic circuits.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 1V at 50mA and 500mA. The transistor type is NPN, and it meets MIL-PRF-19500/255AA specifications.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the JANS2N2222AUB is 50V dc.
The JANS2N2222AUB can handle a continuous collector current (Ic) of 800 mA.
This transistor operates from -65°C to 200°C.
The JANS2N2222AUB is supplied in a 4-SMD, No Lead package and is designed for surface mounting.
The minimum DC current gain (hFE) is 100 when measured at 150mA collector current and 10V collector-emitter voltage.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.