| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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574 pcs
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574 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature Range |
The JANS2N2222A is a high-reliability NPN bipolar junction transistor manufactured by VPT Components. Qualified to MIL-PRF-19500/255, it is designed for demanding applications requiring immunity to ionizing radiation and operation in critical environments.
This transistor offers a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 0.8A. It operates across a wide temperature range from -65°C to 200°C, with a maximum junction temperature of 200°C. The device is housed in a hermetic UB package.
Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) as low as 0.3V at 150mA and a DC current gain (hFE) ranging from 75 to 325 at 1mA. Its suitability for space and harsh environment applications makes it ideal for low current, high precision circuits such as preamplifiers and oscillators.
The JANS2N2222A is specifically recommended for applications where high reliability and performance under radiation exposure are critical. Its hermetic package ensures robust operation in challenging conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 V.
The maximum collector current (IC) is 0.8 A.
The operating temperature range is -65 °C to 200 °C, and the maximum junction temperature is 200 °C.
The JANS2N2222A is available in the UB package.
At 150 mA collector current and 10 V collector-emitter voltage, the DC current gain is 100 to 300.
The saturation voltage is 0.3 V at 150 mA collector current and 1 V at 500 mA collector current.