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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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457 pcs
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457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Supplier Device Package | |
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| Voltage |
The JANS1N5550US is a standard recovery rectifier diode from Microchip Technology designed for general purpose rectification applications. It features a DC reverse voltage rating of 200V and an average rectified current of 3A, with a forward voltage of 1.2V at 9A.
This diode utilizes standard silicon technology and offers a reverse recovery time of 2 µs, classifying it as standard recovery (>500ns, >200mA). It is housed in a surface-mount SQ-MELF, B package and supports an operating temperature range from -65°C to 175°C.
The surface-mount SQ-MELF package enables automated assembly and is suitable for high-reliability applications where standard recovery characteristics are acceptable.
| Qty | Low | High |
|---|---|---|
| 1+ | $91.80 | $91.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DC reverse voltage rating is 200V.
The average rectified current (Io) is 3A.
The forward voltage (Vf) is 1.2V at 9A.
The reverse recovery time (trr) is 2 µs.
It is available in a surface-mount SQ-MELF, B package.
The operating temperature range is -65°C to 175°C.