| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | 84+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation |
The JAN2N869A is a PNP bipolar junction transistor manufactured by Motorola. It is designed for switching applications and features a collector-emitter voltage maximum of 18V and a collector current maximum of 200mA. The device has a power dissipation of 360mW at ambient temperature.
This transistor is housed in a cylindrical TO-18 metal package with wire terminals. It offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 400 MHz. Key switching parameters include a turn-on time of 50 ns and a turn-off time of 80 ns.
With its specifications, the JAN2N869A is suitable for various general-purpose switching circuits. Its metal TO-18 package provides robust thermal performance and durability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 18 V.
The JAN2N869A comes in a TO-18 metal can package with through-hole mounting.
The maximum collector current is 200 mA.
The maximum power dissipation is 360 mW.
The minimum DC current gain is 40.
The transition frequency is 400 MHz.
Turn-on time is 50 ns and turn-off time is 80 ns.