| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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330 pcs
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330 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Vgs(th) (Max) @ Id |
The Microsemi JAN2N7335 is a 4 P-Channel MOSFET array designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 750mA at 25°C. The device has a maximum power dissipation of 1.4W and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The on-resistance (Rds On) is a maximum of 1.4 Ohms at 500mA and 10V.
This MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is qualified to MIL-PRF-19500/599 military standards. The component is mounted using a through-hole method and comes in a 14-DIP package with dimensions of 0.300 inches (7.62mm).
Compliance information indicates RoHS3 compliance, an MSL of 1 (Unlimited), and REACH unaffected status, though these are currently unverified. The JAN2N7335 is suitable for applications requiring robust P-channel MOSFET performance with military-grade reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) at 25°C is 0.75A.
The maximum Rds On is 1.4 Ohm at 500mA, 10V.
The maximum Vgs(th) is 4V at 250µA.
-55°C to 150°C.
It comes in a 14-DIP (0.300 inch, 7.62mm) through-hole package.
RoHS3 compliance status is unverified; treat as low-confidence.