JAN2N6798 The JAN2N6798 is an N-Channel MOSFET from Microsemi Corporation. It offers a 200V drain-source voltage and 5.5A continuous drain current.
Mfr Part #:

JAN2N6798

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The JAN2N6798 is an N-Channel MOSFET from Microsemi Corporation. It offers a 200V drain-source voltage and 5.5A continuous drain current.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.99

JAN2N6798 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

JAN2N6798 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

JAN2N6798 Description

Short technical summary and product information.

The JAN2N6798 is an N-Channel MOSFET manufactured by Microsemi Corporation. This component is designed for various electronic applications requiring robust performance.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.5A at a case temperature (Tc). The on-resistance (Rds On) is specified as a maximum of 420mOhm at 5.5A and 10V gate-source voltage. The gate charge (Qg) is 42.07 nC at 10V Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA Id.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-39 package and features through-hole mounting. The maximum power dissipation is 800mW when measured at the ambient temperature (Ta) and 25W when measured at the case temperature (Tc).

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status. The device utilizes MOSFET technology.

JAN2N6798 Quick Information

Product Type: MOSFET
Canonical Name: JAN2N6798 N-Channel MOSFET
Subcategory: N-Channel

JAN2N6798 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N6798 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N6798 Features

  • 200V maximum drain-source voltage.
  • 5.5A continuous drain current.
  • Low on-resistance of 420mOhm.
  • TO-39 package for through-hole mounting.
  • Wide operating temperature range.

JAN2N6798 Applications

  • Suitable for power switching circuits.
  • Used in general purpose amplification.
  • Ideal for voltage regulation tasks.
  • Applicable in high-frequency designs.

JAN2N6798 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage (Vdss) is 200V.

What is the continuous drain current?

The continuous drain current is 5.5A, measured at the case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the JAN2N6798 available in?

The JAN2N6798 is available in a TO-39 package.

How is the JAN2N6798 mounted?

The JAN2N6798 is designed for through-hole mounting.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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