JAN2N6766 The Microsemi Corporation JAN2N6766 is an N-Channel MOSFET designed for high-power applications. It features a 200V drain-source voltage and a 30A continuous current rating.
Mfr Part #:

JAN2N6766

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi Corporation JAN2N6766 is an N-Channel MOSFET designed for high-power applications. It features a 200V drain-source voltage and a 30A continuous current rating.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.99

JAN2N6766 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

JAN2N6766 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

JAN2N6766 Description

Short technical summary and product information.

The Microsemi Corporation JAN2N6766 is an N-Channel MOSFET with a robust design suitable for demanding applications. It offers a maximum drain-source voltage (Vdss) of 200V and can handle a continuous drain current of 30A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 90mOhm at 30A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage of ±20V. Power dissipation is rated at 4W (ambient) and 150W (case).

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-3 metal can and utilizes through-hole mounting. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes make the JAN2N6766 a reliable choice for power switching and amplification circuits where high current and voltage handling are required.

JAN2N6766 Quick Information

Product Type: MOSFET
Canonical Name: Microsemi Corporation JAN2N6766 N-Channel MOSFET
Subcategory: N-Channel

JAN2N6766 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N6766 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N6766 Features

  • 200V drain-source voltage rating.
  • 30A continuous drain current capability.
  • Low 90mOhm maximum on-resistance.
  • TO-3 metal can package.
  • Operates from -55°C to 150°C.

JAN2N6766 Applications

  • Suitable for high-power switching.
  • Used in power supply circuits.
  • Applicable for motor control.
  • Ideal for linear power regulators.

JAN2N6766 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the JAN2N6766?

The maximum drain-source voltage (Vdss) for the JAN2N6766 is 200V.

What is the continuous drain current rating?

The continuous drain current rating is 30A at 25°C case temperature.

What is the on-resistance of the JAN2N6766?

The maximum on-resistance (Rds On) is 90mOhm when the drain current is 30A and the gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the JAN2N6766 supplied in?

The JAN2N6766 is supplied in a TO-3 metal can package.

How is the JAN2N6766 mounted?

The JAN2N6766 is mounted using the through-hole method.

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