| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 8525 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JAN2N6756 is an N-Channel MOSFET manufactured by CDAS, part of the Military, MIL-PRF-19500/542 series. This component is designed with a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of 14A at 25°C. The on-resistance (Rds On) is a maximum of 210mOhm at 14A and 10V gate-source voltage.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and a maximum gate-source voltage (Vgs) of ±20V. The gate charge (Qg) is specified at 35nC maximum at 10V.
This MOSFET has a maximum power dissipation of 4W at ambient temperature and 75W at case temperature. It operates within a temperature range of -55°C to 150°C.
The JAN2N6756 is packaged in a TO-204AA (TO-3) case and utilizes a through-hole mounting type. It is suitable for applications requiring robust switching and amplification capabilities within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
14A at case temperature.
Maximum 210mOhm at 14A drain current and 10V gate drive.
Maximum 4V at 250µA drain current.
-55°C to 150°C (junction temperature).
TO-204AA (TO-3) through-hole package.
Yes, it belongs to the Military MIL-PRF-19500/542 series.