| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type |
The Microsemi Corporation JAN2N6546 is a single NPN Bipolar Junction Transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 15A.
With a maximum power dissipation of 175W, this transistor is suitable for power handling applications. The Vce saturation is specified at a maximum of 5V when operating at 3A base current and 15A collector current. The minimum DC current gain (hFE) is 12 at 5A collector current and 2V collector-emitter voltage.
This component is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. The operating temperature range is from -65°C to 200°C (TJ). The series is designated as Military, MIL-PRF-19500/525.
Packaging is provided in bulk. Note that while the part may reference military specifications, it is not intended for military use.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300V.
The maximum collector current is 15A.
The maximum power dissipation is 175W.
It comes in a TO-204AA (TO-3) package for through-hole mounting.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain is 12 at 5A collector current and 2V collector-emitter voltage.
The maximum Vce saturation voltage is 5V at a base current of 3A and collector current of 15A.