| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 1422 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The JAN2N6353 is a bipolar junction transistor (BJT) from Microchip Technology, specifically an NPN Darlington type. It is designed for applications requiring high current gain and switching capabilities.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 150V and a continuous collector current rating of 5A. The transistor can dissipate up to 2W of power. It features a high DC current gain (hFE) of 1000 at 5A and 5V, with a Vce saturation of 2.5V maximum at 10mA base current and 5A collector current.
This device operates within a temperature range of -65°C to 200°C. It is packaged in a TO-66 (TO-213AA) case and designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C.
The package type is TO-66 (TO-213AA).
The mounting type is through hole.
The maximum continuous collector current is 5A.
The collector-emitter breakdown voltage is 150V.