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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microsemi JAN2N6306 is an NPN bipolar junction transistor designed for general purpose power applications. This component offers a maximum collector current of 8A and a maximum collector-emitter voltage of 250V.
It is housed in a TO-204AA package with a flange mount, suitable for applications requiring robust thermal management. The transistor has a minimum DC current gain of 4 and a maximum power dissipation of 6W at ambient temperature.
Key electrical characteristics include its NPN polarity and general purpose power transistor type. The terminal finish is tin lead, and the package body is constructed from metal. This transistor is suitable for various industrial and power switching applications where its specifications meet the design requirements.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the JAN2N6306 is 8A.
The maximum collector-emitter voltage of the JAN2N6306 is 250V.
The JAN2N6306 transistor is supplied in a TO-204AA package.
The minimum DC current gain (hFE) for the JAN2N6306 is 4.
The maximum power dissipation of the JAN2N6306 at ambient temperature is 6W.