| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JAN2N6301 is a single NPN Darlington bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for applications requiring high current gain, featuring a minimum DC current gain (hFE) of 750 at 4A and 3V.
This transistor has a maximum collector-emitter voltage rating of 80V and can handle a continuous collector current of up to 500mA. The Vce saturation voltage is a maximum of 3V at 80mA and 8A. It is rated for a power dissipation of 75W and operates across a wide temperature range from -55°C to 200°C (TJ).
The JAN2N6301 is packaged in a TO-66 (TO-213AA) case and features a through-hole mounting type. Its robust specifications make it suitable for various power switching and amplification applications where high gain is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JAN2N6301 has a maximum collector-emitter voltage of 80V.
The JAN2N6301 can handle a continuous collector current of 500mA.
The JAN2N6301 has a minimum DC current gain (hFE) of 750 at 4A and 3V.
The JAN2N6301 operates from -55°C to 200°C (TJ).
The JAN2N6301 is supplied in a TO-66 (TO-213AA) package.
The JAN2N6301 is designed for through-hole mounting.