| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N6284 from Microchip Technology is a high-power NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring significant current handling capabilities, rated for up to 20A collector current and 100V collector-emitter voltage.
This transistor features a high DC current gain (hFE) of 1250 at 10A and 3V, with a Vce saturation of 3V at 200mA and 20A. It has a maximum power dissipation of 175W and operates within a temperature range of -65°C to 200°C (TJ).
The JAN2N6284 is housed in a TO-3 (TO-204AA) package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it suitable for power switching and amplification circuits where reliability and high current capability are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the JAN2N6284 is 100V.
The JAN2N6284 can handle a maximum continuous collector current of 20A.
The DC current gain (hFE) is a minimum of 1250 at 10A and 3V.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N6284 is supplied in a TO-3 package.
The JAN2N6284 is designed for through-hole mounting.