JAN2N6212 The Microchip Technology JAN2N6212 is a PNP bipolar junction transistor designed for various electronic applications. It features a 300V collector-emitter breakdown voltage and a 5mA collector current.
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JAN2N6212

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N6212 is a PNP bipolar junction transistor designed for various electronic applications. It features a 300V collector-emitter breakdown voltage and a 5mA collector current.
Total Stock: 513 pcs
$ Price Range: $0.99

JAN2N6212 Available from 1 distributor

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513 pcs
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JAN2N6212 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JAN2N6212 Description

Short technical summary and product information.

The JAN2N6212 from Microchip Technology is a single PNP bipolar junction transistor. It is designed for through-hole mounting and comes in a TO-66 (TO-213AA) package. This transistor offers a maximum collector-emitter breakdown voltage of 300V and a maximum collector cutoff current of 5mA. Its operating temperature range is from -55°C to 200°C.

 

The JAN2N6212 has a minimum DC current gain (hFE) of 30 at 1A and 5V. The Vce saturation is a maximum of 1.6V at 125mA and 1A. This component is suitable for applications requiring a high voltage PNP transistor with a specific current handling capability.

 

Key electrical characteristics include a maximum power dissipation of 3W. The operating temperature range makes it suitable for demanding environments. The through-hole mounting type simplifies integration into many circuit designs.

 

This transistor is part of the broader category of discrete semiconductor products, specifically single bipolar transistors. Its specifications make it a component for consideration in power switching or amplification circuits where PNP characteristics are required.

JAN2N6212 Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: JAN2N6212 PNP Bipolar Junction Transistor
Subcategory: Bipolar (BJT) - Single

JAN2N6212 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N6212 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N6212 Features

  • PNP bipolar junction transistor
  • 300V collector-emitter breakdown voltage
  • 5mA maximum collector current
  • TO-66 package for through-hole mounting
  • Wide operating temperature range

JAN2N6212 Applications

  • Suitable for high-voltage circuits
  • Used in power switching applications
  • Consider for amplification circuits
  • PNP characteristic requirement

JAN2N6212 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the JAN2N6212?

The maximum collector-emitter breakdown voltage is 300V.

What is the maximum collector current for the JAN2N6212?

The maximum collector current is 5mA.

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 200°C.

What is the package type for the JAN2N6212?

The package is TO-213AA, TO-66-2, also referred to as TO-66.

How is the JAN2N6212 mounted?

It is mounted using the through-hole method.

What is the minimum DC current gain (hFE) at 1A and 5V?

The minimum DC current gain (hFE) is 30 at 1A and 5V.

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