JAN2N5686 The Microchip Technology JAN2N5686 is an NPN power bipolar junction transistor. It offers a maximum collector-emitter voltage of 80V and a high power dissipation capability of 300W.
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JAN2N5686

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N5686 is an NPN power bipolar junction transistor. It offers a maximum collector-emitter voltage of 80V and a high power dissipation capability of 300W.
Total Stock: 327 pcs
$ Price Range: $170.27

JAN2N5686 Available from 2 distributors

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325 pcs
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JAN2N5686 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JAN2N5686 Description

Short technical summary and product information.

The JAN2N5686 from Microchip Technology is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current (IC) of 50A, making it suitable for high-current switching and amplification tasks.

 

With a total power dissipation rating of 300W, the JAN2N5686 can handle significant thermal loads. It operates within a temperature range of -55°C to 200°C (TJ). The transistor is housed in a TO-3 (TO-204AA) package, a robust metal can package known for its excellent thermal conductivity and durability.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 25A and 2V, and a Vce saturation voltage (Vce(sat)) of 5V at 10A and 50A. The mounting type is through-hole, requiring appropriate PCB mounting considerations. This transistor is qualified per MIL-PRF-19500, indicating its suitability for military and high-reliability applications.

JAN2N5686 Quick Information

Product Type: NPN Power Bipolar Junction Transistor
Canonical Name: JAN2N5686 NPN Power Bipolar Junction Transistor
Subcategory: NPN

JAN2N5686 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N5686 Estimated Pricing

Qty Low High
1+ $170.27 $170.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N5686 Features

  • NPN power bipolar junction transistor.
  • 80V collector-emitter voltage rating.
  • 50A maximum collector current.
  • 300W total power dissipation.
  • TO-3 metal can package.

JAN2N5686 Applications

  • High-power switching applications.
  • Linear power amplification.
  • Industrial power control.
  • Military and high-reliability systems.

JAN2N5686 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JAN2N5686?

The maximum collector-emitter voltage (VCEO) for the JAN2N5686 is 80 Vdc.

What is the maximum collector current of the JAN2N5686 transistor?

The JAN2N5686 transistor has a maximum collector current of 50 A.

What is the power dissipation rating of the JAN2N5686?

The JAN2N5686 has a total power dissipation rating of 300 W.

What is the operating temperature range for the JAN2N5686?

The operating temperature range for the JAN2N5686 is -55°C to 200°C (TJ).

What package type is the JAN2N5686 supplied in?

The JAN2N5686 is supplied in a TO-3 (TO-204AA) package.

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