JAN2N5683 The Microchip Technology JAN2N5683 is an NPN bipolar junction transistor designed for high-power applications. It features a 60V collector-emitter breakdown voltage and a 50A collector current rating.
Mfr Part #:

JAN2N5683

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N5683 is an NPN bipolar junction transistor designed for high-power applications. It features a 60V collector-emitter breakdown voltage and a 50A collector current rating.
Total Stock: 3,210 pcs
$ Price Range: $0.99

JAN2N5683 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,200 pcs
3200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10 pcs
10 pcs On Request 1 On Request On Request 0214 On Request On Request

JAN2N5683 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector
Current - Collector Cutoff
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown

JAN2N5683 Description

Short technical summary and product information.

The Microchip Technology JAN2N5683 is a high-performance NPN bipolar junction transistor (BJT) suitable for demanding applications. It offers a robust collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 50A, with a significant power dissipation capability of 300W.

 

This transistor is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. It operates within a wide temperature range of -65°C to 200°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 25A and 2V, and a Vce saturation of 5V at 10A and 50A.

 

The JAN2N5683 is qualified under MIL-PRF-19500/466, indicating its suitability for military and high-reliability applications. Its specifications make it a reliable choice for power switching and amplification circuits where high current and voltage handling are critical.

JAN2N5683 Quick Information

Product Type: NPN Transistor
Canonical Name: Microchip Technology JAN2N5683 NPN Transistor
Subcategory: Bipolar (BJT) - Single

JAN2N5683 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N5683 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N5683 Features

  • 60V collector-emitter breakdown voltage.
  • 50A maximum collector current.
  • 300W maximum power dissipation.
  • TO-3 package for through-hole mounting.
  • Military qualification MIL-PRF-19500/466.

JAN2N5683 Applications

  • Suitable for high-power switching.
  • Ideal for power amplification circuits.
  • Used in demanding industrial applications.
  • Reliable for military-grade systems.

JAN2N5683 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JAN2N5683?

The collector-emitter breakdown voltage is 60V.

What is the maximum collector current for the JAN2N5683?

The maximum collector current is 50A.

What is the maximum power dissipation of the JAN2N5683 transistor?

The maximum power dissipation is 300W.

What is the operating temperature range for the JAN2N5683?

The operating temperature range is -65°C to 200°C (TJ).

What package type is the JAN2N5683 supplied in?

The JAN2N5683 is supplied in a TO-204AA, TO-3 package.

How is the JAN2N5683 mounted?

The JAN2N5683 is a through-hole mounted component.

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