Mfr Part #:

JAN2N5666S

The JAN2N5666S is an NPN Power Silicon Switching Transistor from Microsemi, qualified per MIL-PRF-19500/455. It offers a VCEO of up to 300V and an IC of 5A.

✓ Total Stock: 180 pcs

$ Price Range: $0.99

JAN2N5666S Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	180 pcs On Request	180 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

JAN2N5666S Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Microsemi Corporation
Military Grade	Yes
SVHC Present	Not Present
Turn On Time	0.25 μ s

View Similar Products (0)

JAN2N5666S Description

Short technical summary and product information.

The JAN2N5666S is a high-reliability NPN Power Silicon Switching Transistor manufactured by Microsemi Corporation. This device is qualified per MIL-PRF-19500/455, indicating its suitability for demanding applications.

Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 300 Vdc and a maximum Collector Current (IC) of 5 Adc. The transistor features a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 1.0 Vdc at 5.0 Adc and 1.0 Adc base current. Its Forward-Current Transfer Ratio (hFE) ranges from 5.0 to 120 depending on the operating conditions.

Dynamic characteristics include an output capacitance (Cobo) of 120 pF and switching times with a turn-on time (ton) of 0.25 μs and a turn-off time (toff) of up to 2.0 μs. The operating and storage junction temperature range is from -65°C to +200°C.

The JAN2N5666S is available in multiple package types, including TO-39 (TO-205AD), TO-66 (TO-213AA), TO-5, and U-3, facilitating integration into various circuit designs.

JAN2N5666S Quick Information

Product Type: NPN Power Silicon Switching Transistor

Series: JAN

Canonical Name: JAN2N5666S NPN Power Silicon Switching Transistor

JAN2N5666S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

JAN2N5666S Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N5666S Features

Qualified per MIL-PRF-19500/455.
Maximum Collector-Emitter Voltage 300 Vdc.
Maximum Collector Current 5 Adc.
Low Collector-Emitter Saturation Voltage.
Available in TO-39 package.

JAN2N5666S Applications

Suitable for high-reliability switching.
Power control applications.
Military and aerospace systems.
Industrial power supplies.

JAN2N5666S FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage (Vceo) of the JAN2N5666S?

The JAN2N5666S has a maximum collector-emitter voltage of 200V and 300V depending on the specific variant.

What is the continuous collector current rating?

The maximum continuous collector current (Ic) is 5.0 Adc.

What are the available package options for this transistor?

The JAN2N5666S is available in TO-39, TO-66, TO-5, and U-3 packages.

What is the operating junction temperature range?

The operating and storage junction temperature range is -65°C to +200°C.

What is the typical DC current gain (hFE) of the JAN2N5666S?

The hFE ranges from a minimum of 10 to a maximum of 120 depending on test conditions, with typical values around 40 at 0.5A.

What is the maximum turn-on time?

The turn-on time (ton) is 0.25 μs maximum.

What is the maximum turn-off time?

The turn-off time (toff) is 1.5 μs or 2.0 μs depending on condition.