| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JAN2N5666 is an NPN Power Silicon Switching Transistor manufactured by Microchip Technology. This device is qualified per MIL-PRF-19500/455 and is designed for high-power switching applications.
Key electrical characteristics include a Collector-Emitter Voltage (Vceo) of 200V and a Collector Current (Ic) of 5A. The transistor offers a minimum DC Current Gain (hFE) of 40 at 1A and 5V, and a maximum Collector-Emitter Saturation Voltage (Vce(sat)) of 1V at 5A and 1A base current. Its operating and storage junction temperature range is from -65°C to +200°C.
The JAN2N5666 is supplied in a TO-5 metal can package, suitable for through-hole mounting. This transistor is well-suited for various power switching applications where reliability and performance are critical.
Additional specifications include a maximum power dissipation of 1.2W at 25°C ambient temperature and 15W at 100°C case temperature. Dynamic characteristics include an output capacitance (Cobo) of 120 pF and switching times such as turn-on time of 0.25 μs and turn-off time of 1.5 μs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (Vceo) for the JAN2N5666 transistor is 200 Vdc.
The maximum Collector Current (Ic) for the JAN2N5666 transistor is 5.0 Adc.
The operating and storage junction temperature range for the JAN2N5666 transistor is -65°C to +200°C.
The JAN2N5666 transistor is supplied in a TO-5 metal can package.
The RoHS status of the JAN2N5666 transistor is RoHS3 Compliant.