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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1607 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| ICBO (Maximum @ VCB = 200 Vdc) | |
| ICBO (Maximum @ VCB = 250 Vdc) | |
| ICBO (Maximum @ VCB = 300 Vdc) | |
| ICBO (Maximum @ VCB = 400 Vdc) | |
| ICES (Maximum @ VCE = 200 Vdc) | |
| ICES (Maximum @ VCE = 300 Vdc) | |
| Mounting Type | |
| Operating & Storage Junction Temperature Range | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| PD (Maximum @ TC=100 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| V(BR)CER (Minimum @ IC = 10 mAdc) | |
| VBE(sat) (Maximum @ IC = 3.0 Adc, IB = 0.3 Adc) | |
| VBE(sat) (Maximum @ IC = 3.0 Adc, IB = 0.6 Adc) | |
| VBE(sat) (Maximum @ IC = 5.0 Adc, IB = 1.0 Adc) | |
| VCE(sat) (Maximum @ IC = 3.0 Adc, IB = 0.3 Adc) | |
| VCE(sat) (Maximum @ IC = 3.0 Adc, IB = 0.6 Adc) | |
| VCE(sat) (Maximum @ IC = 5.0 Adc, IB = 1.0 Adc) | |
| Vcbo (Maximum @ VCB = 250 Vdc) | |
| Vcbo (Maximum @ VCB = 400 Vdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vceo (Maximum @ VCE = 200 Vdc) | |
| Vceo (Maximum @ VCE = 300 Vdc) | |
| Voltage | |
| hFE (@ IC = 0.5 Adc, VCE = 5.0 Vdc, f = 10 MHz) | |
| hFE (Minimum @ IC = 0.5 Adc, VCE = 2.0 Vdc) | |
| hFE (Minimum @ IC = 1.0 Adc, VCE = 5.0 Vdc) | |
| hFE (Minimum @ IC = 3.0 Adc, VCE = 5.0 Vdc) | |
| hFE (Minimum @ IC = 5.0 Adc, VCE = 5.0 Vdc) | |
| toff (Maximum @ VCC = 100 Vdc; IC = 1.0 Adc; IB 1 = -IB 2 = 50 mAdc) |
The JAN2N5664 from Microchip Technology is an NPN power silicon switching transistor designed for high-reliability applications, qualified per MIL-PRF-19500/455. This device features a collector-emitter voltage (Vceo) of up to 200V and a continuous collector current (Ic) of 5A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1A and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 1V maximum at 5A collector current and 1A base current. The transistor also exhibits a dynamic characteristic with an output capacitance (Cobo) of 120 pF at 10V and 100kHz to 1MHz.
Packaged in a TO-66 (TO-213AA) through-hole package, the JAN2N5664 operates across a wide temperature range from -65°C to +200°C. Its robust construction and specifications make it suitable for power switching applications where reliability is paramount.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the JAN2N5664 is 200 Vdc.
The maximum continuous collector current (Ic) for the JAN2N5664 is 5.0 Adc.
The operating and storage junction temperature range is -65°C to +200°C.
The JAN2N5664 is supplied in a TO-66 (TO-213AA) package.
The minimum DC current gain (hFE) at 1A and 5V is 40.
The turn-on time (ton) is 0.25 μs under the specified test conditions.
The turn-off time (toff) is 1.5 μs under the specified test conditions.