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JAN2N5664 The Microchip Technology JAN2N5664 is an NPN power silicon switching transistor. It offers a collector-emitter voltage of 200V and a collector current of 5A.
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JAN2N5664

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N5664 is an NPN power silicon switching transistor. It offers a collector-emitter voltage of 200V and a collector current of 5A.
✓ Total Stock: 4,100 pcs
$ Price Range: $0.99

JAN2N5664 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1607 On Request On Request
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JAN2N5664 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage
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JAN2N5664 Description

Short technical summary and product information.

The JAN2N5664 from Microchip Technology is an NPN power silicon switching transistor designed for high-reliability applications, qualified per MIL-PRF-19500/455. This device features a collector-emitter voltage (Vceo) of up to 200V and a continuous collector current (Ic) of 5A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1A and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 1V maximum at 5A collector current and 1A base current. The transistor also exhibits a dynamic characteristic with an output capacitance (Cobo) of 120 pF at 10V and 100kHz to 1MHz.

 

Packaged in a TO-66 (TO-213AA) through-hole package, the JAN2N5664 operates across a wide temperature range from -65°C to +200°C. Its robust construction and specifications make it suitable for power switching applications where reliability is paramount.

JAN2N5664 Quick Information

Product Type: NPN Transistor
Canonical Name: JAN2N5664 NPN Power Silicon Switching Transistor
Subcategory: Single

JAN2N5664 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N5664 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N5664 Features

  • NPN power silicon switching transistor.
  • 200V collector-emitter voltage rating.
  • 5A continuous collector current.
  • TO-66 (TO-213AA) through-hole package.
  • Qualified per MIL-PRF-19500/455.

JAN2N5664 Applications

  • Suitable for power switching circuits.
  • High-reliability electronic systems.
  • Industrial control applications.
  • Power supply designs.

JAN2N5664 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JAN2N5664?

The maximum collector-emitter voltage (Vceo) for the JAN2N5664 is 200 Vdc.

What is the maximum continuous collector current?

The maximum continuous collector current (Ic) for the JAN2N5664 is 5.0 Adc.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to +200°C.

What package type is the JAN2N5664 supplied in?

The JAN2N5664 is supplied in a TO-66 (TO-213AA) package.

What is the minimum DC current gain (hFE) at 1A and 5V?

The minimum DC current gain (hFE) at 1A and 5V is 40.

What is the turn-on time for this transistor?

The turn-on time (ton) is 0.25 μs under the specified test conditions.

What is the turn-off time for this transistor?

The turn-off time (toff) is 1.5 μs under the specified test conditions.

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