| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,745 pcs
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8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology JAN2N5662 is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a high collector-emitter breakdown voltage of 200V and can handle a maximum collector current of 2A.
This transistor is designed for through-hole mounting and comes in a TO-205AA, TO-5-3 Metal Can package. It operates within a wide temperature range of -65°C to 200°C (TJ), making it suitable for demanding environments. The device offers a minimum DC current gain (hFE) of 40 at 500mA and 5V, with a Vce saturation of 800mV maximum at 400mA and 2A.
With a maximum power dissipation of 1W, the JAN2N5662 is a robust component for signal amplification and switching applications. Its military-grade qualification (MIL-PRF-19500/454) suggests reliability for critical systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 200V.
The maximum continuous collector current is 2A.
The maximum power dissipation is 1W.
The minimum DC current gain (hFE) is 40 at 500mA and 5V.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N5662 is designed for through-hole mounting.