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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor from Microchip Technology, part number JAN2N5582, is housed in a TO-46-3 metal can package. It is designed for through-hole mounting and operates within a wide temperature range of -55°C to 200°C.
The JAN2N5582 features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 800mA. Its total power dissipation is 500mW. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V, with a Vce saturation of 1V maximum at 500mA collector current and 50mA base current.
This transistor is suitable for various electronic circuits requiring a reliable NPN switching or amplification component. Its robust construction and wide operating temperature make it a versatile choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 200°C.
The package type is TO-206AB, TO-46-3 Metal Can.
The maximum continuous collector current is 800 mA.
The collector-emitter breakdown voltage is 50 V.