| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JAN2N5415S from Microchip Technology is a single PNP bipolar junction transistor (BJT). It is rated for a maximum collector-emitter breakdown voltage of 200V and can handle a continuous collector current of up to 1A. The transistor has a maximum power dissipation of 750 mW.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA and 10V, and a Vce saturation voltage of 2V at 5mA and 50mA. The operating temperature range is from -65°C to 200°C (TJ).
This component is supplied in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The series is identified as Military, MIL-PRF-19500/485. The RoHS status is listed as RoHS3 Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 200 V.
The maximum continuous collector current is 1 A.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N5415S is supplied in a TO-39 (TO-205AD) metal can package.
The RoHS status is RoHS3 Compliant.