JAN2N5415S The Microchip Technology JAN2N5415S is a PNP bipolar transistor designed for 200V operation with a 1A collector current. It comes in a TO-39 package.
Mfr Part #:

JAN2N5415S

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N5415S is a PNP bipolar transistor designed for 200V operation with a 1A collector current. It comes in a TO-39 package.
Total Stock: 46 pcs
$ Price Range: $0.99

JAN2N5415S Available from 1 distributor

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JAN2N5415S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector (Ic) (Max)
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown

JAN2N5415S Description

Short technical summary and product information.

The JAN2N5415S from Microchip Technology is a single PNP bipolar junction transistor (BJT). It is rated for a maximum collector-emitter breakdown voltage of 200V and can handle a continuous collector current of up to 1A. The transistor has a maximum power dissipation of 750 mW.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA and 10V, and a Vce saturation voltage of 2V at 5mA and 50mA. The operating temperature range is from -65°C to 200°C (TJ).

 

This component is supplied in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The series is identified as Military, MIL-PRF-19500/485. The RoHS status is listed as RoHS3 Compliant.

JAN2N5415S Quick Information

Product Type: Bipolar Transistor
Series: Military, MIL-PRF-19500/485
Canonical Name: JAN2N5415S PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

JAN2N5415S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N5415S Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N5415S Features

  • 200V collector-emitter breakdown voltage.
  • 1A maximum continuous collector current.
  • 750 mW maximum power dissipation.
  • Wide -65°C to 200°C operating temperature.
  • TO-39 metal can package.

JAN2N5415S Applications

  • Suitable for high voltage switching.
  • Used in amplification circuits.
  • General purpose PNP applications.
  • Military specification compliant.

JAN2N5415S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the JAN2N5415S?

The maximum collector-emitter breakdown voltage is 200 V.

What is the maximum continuous collector current?

The maximum continuous collector current is 1 A.

What is the operating temperature range?

The operating temperature range is -65°C to 200°C (TJ).

What package type is the JAN2N5415S supplied in?

The JAN2N5415S is supplied in a TO-39 (TO-205AD) metal can package.

What is the RoHS status of this transistor?

The RoHS status is RoHS3 Compliant.

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