| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature |
The JAN2N5039 from Microsemi Corporation is a high-power NPN bipolar junction transistor (BJT) housed in a TO-3 package. This device is designed for applications requiring significant current handling capabilities, with a maximum collector current of 20A and a collector-emitter voltage rating of 75V.
Key electrical characteristics include a typical collector-emitter saturation voltage of 2.5V at 5A and 20A, and a minimum DC current gain (hFE) of 30 at 2A and 5V. The operating temperature range is from -65°C to 200°C, making it suitable for demanding environments.
The transistor is through-hole mounted, utilizing the TO-204AA or TO-3 form factor. Its robust construction and specifications make it a reliable choice for power switching and amplification circuits where high current and voltage are primary considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 20 A.
The maximum collector-emitter voltage is 75 V.
Typically 2.5 V at a base current of 5 A and collector current of 20 A.
Minimum of 30 at VCE = 5 V and IC = 2 A.
The operating temperature range is -65°C to 200°C.
The package type is TO-204AA (TO-3) with through-hole mounting.