| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N5013 from Microsemi is a single NPN bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector current of 200mA and a high collector-emitter breakdown voltage of 800V, making it suitable for circuits requiring significant voltage handling.
This transistor has a DC current gain (hFE) of at least 30 at 20mA and 10V. It is rated for a power dissipation of 1W and operates across a wide temperature range from -65°C to 200°C (TJ). The JAN2N5013 is packaged in a TO-205AA, TO-5-3 Metal Can (TO-5) and is designed for through-hole mounting.
Its robust construction and specifications make it a reliable component for applications demanding high voltage operation. The series designation indicates it meets military standards, suggesting suitability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the JAN2N5013 is 200mA.
The collector-emitter breakdown voltage for the JAN2N5013 is 800V.
The operating temperature range for the JAN2N5013 is -65°C to 200°C (TJ).
The JAN2N5013 is available in a TO-205AA, TO-5-3 Metal Can package, with a supplier device package of TO-5.
The JAN2N5013 transistor is designed for Through Hole mounting.