| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,222 pcs
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3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology JAN2N4449 is a single NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a collector-emitter breakdown voltage of 20V and a maximum power dissipation of 360mW. The transistor operates within a wide temperature range, from -65°C to 200°C (TJ).
This component is supplied in a TO-46 (TO-206AB) metal can package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 100mA and 1V, and a Vce saturation of 450mV maximum at 10mA collector current and 100mA base current. The collector cutoff current is rated at a maximum of 400nA.
The JAN2N4449 is classified under military-grade specifications, indicated by the 'JAN' prefix and MIL-PRF-19500/317 qualification. Its robust construction and wide operating temperature make it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 20V.
The JAN2N4449 is supplied in a TO-46 (TO-206AB) metal can package.
The operating temperature range is -65°C to 200°C (TJ).
The RoHS status is RoHS3 Compliant.