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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | 1030 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown |
The JAN2N4033 from Microchip Technology is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a robust design with a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. The transistor can dissipate up to 800mW of power and operates within a wide temperature range of -55°C to 200°C.
This component is designed for through-hole mounting, utilizing a TO-39 (TO-205AD) metal can package. Its DC current gain (hFE) is a minimum of 100 at 100mA and 5V, with a Vce saturation of 1V maximum at 100mA and 1A.
The JAN2N4033 is specified with a collector cutoff current of 10μA (ICBO) maximum. Its compliance status includes RoHS3, MSL 1, and REACH unaffected, though these are noted as unverified in the database.
This transistor is a reliable choice for applications requiring a general-purpose PNP device with moderate power and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 200°C
1 A
TO-205AD, TO-39-3 Metal Can
100 @ 100mA, 5V
80 V