| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JAN2N3879 from Microchip Technology is a single NPN bipolar junction transistor (BJT) housed in a TO-66 (TO-213AA) package. This through-hole component is rated for a maximum collector-emitter voltage of 75V and a continuous collector current of 7A, with a power dissipation of 35W.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 5V, and a Vce saturation voltage of 1.2V maximum at 400mA base current and 4A collector current. The operating temperature range is -65°C to 200°C (TJ).
This transistor is suitable for various switching and amplification applications where its robust current and voltage ratings are beneficial. The TO-66 package provides adequate thermal dissipation for moderate power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JAN2N3879 transistor has a maximum voltage rating of 75V.
The JAN2N3879 transistor can handle a continuous current of 7A.
The power dissipation for the JAN2N3879 transistor is 35W.
The operating temperature range for the JAN2N3879 is -65°C to 200°C (TJ).
The JAN2N3879 is an NPN bipolar junction transistor.
The JAN2N3879 transistor is supplied in a TO-66 (TO-213AA) package.
The JAN2N3879 transistor is mounted using the through-hole method.