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JAN2N3868

The Microsemi Corporation JAN2N3868 is a PNP bipolar junction transistor. It features a 60V collector-emitter breakdown voltage and a maximum collector current of 3mA.

✓ Total Stock: 200 pcs

$ Price Range: $0.99

JAN2N3868 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	200 pcs On Request	200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

JAN2N3868 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Microsemi Corporation
Mounting Type	Through Hole
Operating Temperature	-65°C ~ 200°C (TJ)
SVHC Present	Not Present
Vce Saturation (Max)	1.5V @ 250mA, 2.5A

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JAN2N3868 Description

Short technical summary and product information.

The Microsemi Corporation JAN2N3868 is a single PNP bipolar junction transistor (BJT) designed for various electronic applications. It offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 3mA, making it suitable for low-power switching and amplification tasks.

This transistor operates within a wide temperature range of -65°C to 200°C (TJ), ensuring reliability in diverse environmental conditions. It has a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 30 at 1.5A and 2V. The saturation voltage (Vce) is a maximum of 1.5V at 250mA and 2.5A, with a collector cutoff current (ICBO) of 100μA.

The JAN2N3868 is packaged in a TO-205AA, TO-5-3 Metal Can configuration and is designed for through-hole mounting. Its bulk packaging is suitable for industrial applications. The component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, indicating adherence to certain environmental and safety standards.

This part is qualified under MIL-PRF-19500/350, suggesting it meets military specifications for reliability and performance. Its robust construction and specified parameters make it a dependable choice for designs requiring a general-purpose PNP transistor.

JAN2N3868 Quick Information

Product Type: PNP Transistor

Series: JAN2N3868

Canonical Name: Microsemi Corporation JAN2N3868 PNP Transistor

Subcategory: Bipolar (BJT) - Single

JAN2N3868 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

JAN2N3868 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N3868 Features

60V collector-emitter breakdown voltage.
3mA maximum collector current.
1W maximum power dissipation.
Wide -65°C to 200°C operating temperature.
Through-hole mounting in metal can package.

JAN2N3868 Applications

Suitable for low-power switching.
Used in general amplification circuits.
Reliable in harsh environmental conditions.
Meets military performance specifications.

JAN2N3868 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage of the JAN2N3868?

The collector-emitter breakdown voltage is 60 V.

What is the maximum collector current for the JAN2N3868?

The maximum collector current is 3 mA.

What is the maximum power dissipation of the JAN2N3868 transistor?

The maximum power dissipation is 1 W.

What is the operating temperature range for the JAN2N3868?

The operating temperature range is -65°C to 200°C (TJ).

How is the JAN2N3868 transistor mounted?

The JAN2N3868 is designed for through-hole mounting.

What is the package type for the JAN2N3868?

The package is TO-205AA, TO-5-3 Metal Can.