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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Microchip Technology JAN2N3791 is a PNP bipolar junction transistor (BJT) suitable for demanding environments. This through-hole component is housed in a TO-3 (TO-204AA) package.
Key electrical specifications include a collector-emitter breakdown voltage (Vce) of 60 V and a continuous collector current (Ic) of up to 10 A. It features a maximum power dissipation of 5 W and a minimum DC current gain (hFE) of 30 at 3 A and 2 V. The saturation voltage (Vce Sat) is rated at a maximum of 2.5 V at 2 A base current and 10 A collector current.
With an operating temperature range of -65°C to 200°C, the JAN2N3791 is qualified to MIL-PRF-19500/379, making it appropriate for aerospace, defense, and industrial power control systems. The transistor has a collector cutoff current of 5mA.
This component is supplied in bulk packaging. Its mounting type is through hole.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60 V.
The maximum continuous collector current is 10 A.
The minimum DC current gain (hFE) is 30 at 3A collector current and 2V Vce.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N3791 is supplied in a TO-3 package.
No, the JAN2N3791 is RoHS non-compliant.