JAN2N3791 The Microchip Technology JAN2N3791 is a PNP bipolar junction transistor designed for high-reliability applications. It offers a 60V collector-emitter breakdown voltage and a 10A continuous collector current.
Mfr Part #:

JAN2N3791

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N3791 is a PNP bipolar junction transistor designed for high-reliability applications. It offers a 60V collector-emitter breakdown voltage and a 10A continuous collector current.
Total Stock: 2,568 pcs
$ Price Range: $0.99

JAN2N3791 Available from 1 distributor

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2,568 pcs
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JAN2N3791 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JAN2N3791 Description

Short technical summary and product information.

The Microchip Technology JAN2N3791 is a PNP bipolar junction transistor (BJT) suitable for demanding environments. This through-hole component is housed in a TO-3 (TO-204AA) package.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vce) of 60 V and a continuous collector current (Ic) of up to 10 A. It features a maximum power dissipation of 5 W and a minimum DC current gain (hFE) of 30 at 3 A and 2 V. The saturation voltage (Vce Sat) is rated at a maximum of 2.5 V at 2 A base current and 10 A collector current.

 

With an operating temperature range of -65°C to 200°C, the JAN2N3791 is qualified to MIL-PRF-19500/379, making it appropriate for aerospace, defense, and industrial power control systems. The transistor has a collector cutoff current of 5mA.

 

This component is supplied in bulk packaging. Its mounting type is through hole.

JAN2N3791 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: Single

JAN2N3791 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N3791 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N3791 Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter breakdown voltage.
  • 10A maximum continuous collector current.
  • 5W maximum power dissipation.
  • TO-3 package for through-hole mounting.

JAN2N3791 Applications

  • Used in high-voltage switching circuits
  • Suitable for linear amplification applications
  • Ideal for power regulation in industrial systems
  • Mounted in TO-3 package for heat management

JAN2N3791 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JAN2N3791?

The collector-emitter breakdown voltage is 60 V.

What is the maximum continuous collector current for the JAN2N3791?

The maximum continuous collector current is 10 A.

What is the minimum DC current gain (hFE) for the JAN2N3791?

The minimum DC current gain (hFE) is 30 at 3A collector current and 2V Vce.

What is the operating temperature range for the JAN2N3791?

The operating temperature range is -65°C to 200°C (TJ).

What package type is the JAN2N3791 supplied in?

The JAN2N3791 is supplied in a TO-3 package.

Is the JAN2N3791 RoHS compliant?

No, the JAN2N3791 is RoHS non-compliant.

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