JAN2N3766

The Microsemi Corporation JAN2N3766 is a silicon NPN bipolar junction transistor (BJT) suitable for general purpose power switching applications. This component is rated for a maximum collector current of 4A and a maximum collector-emitter voltage of 60V. It offers a minimum DC current gain (hFE) of 20 and a nominal transition frequency (fT) of 10 MHz.

The JAN2N3766 comes in a TO-66 metal package with a flange mount. The terminals are tin-lead finished and are pin/peg style, positioned at the bottom. This transistor is designed for switching applications, providing reliable performance in power circuits.

Key electrical characteristics include its NPN polarity and silicon element material. The transistor type is classified as General Purpose Power, indicating its suitability for a range of power handling tasks. The TO-66 package is a standard form factor for power transistors, facilitating heat dissipation and mounting.

This component is part of the single bipolar transistor category, offering a discrete solution for electronic designs requiring specific transistor characteristics. Its specifications make it a viable option for various power switching circuits where its voltage and current ratings are appropriate.