| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Grade | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type |
The JAN2N3764 from Microsemi Corporation is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-46 (TO-206AB) metal can package.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a maximum collector current of 1.5A. The transistor has a Vce saturation of 900mV at 100mA/1A and a minimum DC current gain (hFE) of 30 at 1A/1.5V. It can dissipate up to 500mW of power and operates within a temperature range of -55°C to 200°C.
This component is qualified to MIL-PRF-19500/396 standards, indicating its suitability for military applications. The through-hole mounting type facilitates easy integration into circuit boards.
Environmental compliance information indicates RoHS non-compliance, MSL 1 (Unlimited), and REACH Unaffected status. These details are important for design and procurement considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 200°C (junction temperature).
The JAN2N3764 is supplied in a TO-46 (TO-206AB) metal can package for through-hole mounting.
The maximum collector current is 1.5 A.
The collector-emitter breakdown voltage is 40 V maximum.
The minimum DC current gain is 30 at 1 A collector current and 1.5 V collector-emitter voltage.
The maximum power dissipation is 500 mW.