| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Operating Temperature | |
| SVHC Present |
The JAN2N3715 is a high-power NPN bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. Designed for robust performance, it features a collector-emitter breakdown voltage of 60V and a maximum collector current of 10A. This transistor is suitable for applications requiring significant power handling capabilities.
With an operating temperature range of -65°C to 200°C, the JAN2N3715 can operate reliably in demanding environments. It is packaged in a TO-3 case, indicating its suitability for power applications where heat dissipation is a concern. The standard package quantity is 1 unit.
This component falls under the category of Discrete Semiconductor Products, specifically within Single Bipolar Junction Transistors. Its specifications make it a candidate for power switching and amplification circuits where high current and voltage ratings are necessary.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
10A.
-65°C to 200°C.
TO3.
NPN bipolar junction transistor.